FQU2N60CTU MOSFET 600V N-Channel Adv Q-FET C-Series
♠ Product Description
| Yam khoom | Tus nqi tsim nyog |
| Chaw tsim tshuaj paus: | kev |
| Yam khoom: | MOSFET |
| Technology: | Si |
| Mounting Style: | Los ntawm Qhov |
| Pob / Case: | TSO-251-3 |
| Transistor polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Ntws-qhov chaw tawg Voltage: | 600 V |
| Id - Nruam Drain Tam Sim No: | 1.9 A |
| Rds On - Drain-Source Resistance: | 4.7 hmo |
| Vgs - Rooj vag qhov chaw Voltage: | - 30V, + 30V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V |
| Qg - Gate Charge: | 12 nco |
| Yam tsawg kawg nkaus ua haujlwm kub: | - 55 C ua |
| Ua haujlwm kub siab tshaj plaws: | + 150 C |
| Pd - Fais fab Dissipation: | 2.5 wb |
| Channel hom: | Txhim kho |
| Ntim: | Tube |
| Hom Tshuaj: | onsemi / Fairchild |
| Configuration: | Ib leeg |
| Caij nplooj zeeg: | 28 nsq |
| Forward Transconductance - Min: | 5 S |
| Qhov siab: | 6.3mm ib |
| Ntev: | 6.8mm ib |
| Yam khoom: | MOSFET |
| Sijhawm sawv: | 25 nsq |
| Series: | FQU2N60C |
| Factory Pack Quantity: | 5 040 |
| Cov qeb: | MOSFETs |
| Hom Transistor: | 1 N-Channel |
| Hom: | MOSFET |
| Lub Sijhawm Tig-Off ncua sijhawm: | 24 nsq |
| Lub Sijhawm Tig-On ncua sijhawm: | 9 nsq |
| Dav: | 2.5 hli |
| Chav ntsuas hnyav: | 0.01193 oz |
♠ MOSFET - N-Channel, QFET 600 V, 1.9 A, 4,7
Qhov N-Channel txhim kho hom fais fab MOSFET no yog tsim los siv onsemi tus tswv planar stripe thiab DMOS technology. Qhov no MOSFET thev naus laus zis tau tsim tshwj xeeb los txo qis hauv lub xeev tsis kam, thiab muab kev hloov pauv zoo dua thiab muaj zog avalanche siab zog. Cov khoom siv no tsim nyog rau cov khoom siv hluav taws xob hloov pauv, hloov kho lub zog hloov pauv (PFC), thiab hluav taws xob teeb ballasts.
• 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A
• Tsawg Gate Charge (Yp. 8.5 nC)
• Tsawg Crss (Hom. 4.3 pF)
• 100% Avalanche Tested
• Cov cuab yeej no yog Halid Dawb thiab yog RoHS raws
