FQU2N60CTU MOSFET 600V N-Channel Adv Q-FET C-Series

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Manufacturers: ON Semiconductor
Yam khoom: Transistors – FETs, MOSFETs – Ib leeg
Daim ntawv qhia:FQU2N60 ​​CTU
Nqe lus piav qhia: MOSFET N-CH 600V 1.9A IPAK
RoHS raws li txoj cai: RoHS raws


Product Detail

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Khoom cim npe

♠ Product Description

Yam khoom Tus nqi tsim nyog
Chaw tsim tshuaj paus: kev
Yam khoom: MOSFET
Technology: Si
Mounting Style: Los ntawm Qhov
Pob / Case: TSO-251-3
Transistor polarity: N-Channel
Number of Channels: 1 Channel
Vds - Ntws-qhov chaw tawg Voltage: 600 V
Id - Nruam Drain Tam Sim No: 1.9 A
Rds On - Drain-Source Resistance: 4.7 hmo
Vgs - Rooj vag qhov chaw Voltage: - 30V, + 30V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 12 nco
Yam tsawg kawg nkaus ua haujlwm kub: - 55 C ua
Ua haujlwm kub siab tshaj plaws: + 150 C
Pd - Fais fab Dissipation: 2.5 wb
Channel hom: Txhim kho
Ntim: Tube
Hom Tshuaj: onsemi / Fairchild
Configuration: Ib leeg
Caij nplooj zeeg: 28 nsq
Forward Transconductance - Min: 5 S
Qhov siab: 6.3mm ib
Ntev: 6.8mm ib
Yam khoom: MOSFET
Sijhawm sawv: 25 nsq
Series: FQU2N60C
Factory Pack Quantity: 5 040
Cov qeb: MOSFETs
Hom Transistor: 1 N-Channel
Hom: MOSFET
Lub Sijhawm Tig-Off ncua sijhawm: 24 nsq
Lub Sijhawm Tig-On ncua sijhawm: 9 ib ns
Dav: 2.5 hli
Chav ntsuas hnyav: 0.01193 oz

♠ MOSFET - N-Channel, QFET 600 V, 1.9 A, 4,7

Qhov N-Channel txhim kho hom fais fab MOSFET no yog tsim los siv onsemi tus tswv planar stripe thiab DMOS technology.Qhov no MOSFET thev naus laus zis tau tsim tshwj xeeb los txo qis hauv lub xeev tsis kam, thiab muab kev hloov pauv zoo dua thiab muaj zog avalanche siab zog.Cov khoom siv no tsim nyog rau cov khoom siv hluav taws xob hloov pauv, hloov kho lub zog hloov pauv (PFC), thiab hluav taws xob teeb ballasts.


  • Yav dhau los:
  • Tom ntej:

  • • 1.9 A, 600 V, RDS(on) = 4.7 (Max.) @ VGS = 10 V, ID = 0.95 A
    • Tsawg Gate Charge (Yp. 8.5 nC)
    • Tsawg Crss (Hom. 4.3 pF)
    • 100% Avalanche Tested
    • Cov cuab yeej no yog Halid Dawb thiab yog RoHS raws

    Yam khoom