IDW30G120C5BFKSA1 Schottky Diodes & Rectifiers SIC CHIP / DISCRETE
♠ Product Description
Yam khoom | Tus nqi tsim nyog |
Chaw tsim tshuaj paus: | Infineon |
Yam khoom: | Schottky Diodes & Rectifiers |
RoHS: | Paub meej |
Khoom siv: | Schottky Silicon Carbide Diodes |
Mounting Style: | Los ntawm Qhov |
Pob / Case: | TSO-247-3 |
Configuration: | Dual Anode Common Cathode |
Technology: | SiC |
Yog - Forward Current: | 30 A |
Vrrm - Rov ua dua rov qab Voltage: | 1.2 kV ua |
Vf - Forward voltage: | 1.4 V ib |
Ifsm - Forward Surge Current: | 240 A |
Ir - Rov qab tam sim no: | 17 ua |
Yam tsawg kawg nkaus ua haujlwm kub: | - 55 C ua |
Ua haujlwm kub siab tshaj plaws: | + 175 C |
Series: | IDW30G120C5 |
Ntim: | Tube |
Hom Tshuaj: | Infineon Technologies |
Pd - Fais fab Dissipation: | 332 wb |
Yam khoom: | Schottky Diodes & Rectifiers |
Factory Pack Quantity: | 240 |
Cov qeb: | Diodes & Rectifiers |
Lub npe lag luam: | CoolSiC |
Vr - Rov qab Voltage: | 1.2 kV ua |
Ntu # Aliases: | IDW30G120C5B SP001123716 |
Chav ntsuas hnyav: | 1.34041 oz |
·Revolutionary semiconductor khoom - Silicon Carbide
·Tsis muaj kev rov qab rov qab tam sim no / Tsis muaj kev rov qab los tom ntej
·Temperature ywj siab hloov tus cwj pwm
·Tsawg rau pem hauv ntej voltage txawm nyob rau hauv siab khiav hauj lwm kub
·Tight forward voltage faib
·Kev ua haujlwm thermal zoo heev
·Extended surge tam sim no muaj peev xwm
·Specified dv/dt ruggedness
·Tsim nyog raws li JEDEC1) rau lub hom phiaj daim ntawv thov
·Pb-dawb txhuas plating;Raws li RoHS
·Hnub ci inverter
·Cov khoom siv hluav taws xob tsis cuam tshuam
·Tsav tsav
·Power Factor Kho