IKW50N65EH5XKSA1 IGBT Transistors Kev Lag Luam 14
♠ Product Description
| Yam khoom | Tus nqi tsim nyog |
| Chaw tsim tshuaj paus: | Infineon |
| Yam khoom: | IGBT Transistors |
| Technology: | Si |
| Pob / Case: | TSO-247-3 |
| Mounting Style: | Los ntawm Qhov |
| Configuration: | Ib leeg |
| Collector-Emitter Voltage VCEO Max: | 6 50v |
| Collector-Emitter Saturation Voltage: | 1, 65 v |
| Maximum Gate Emitter Voltage: | 20 V |
| Nruam Collector Tam sim no ntawm 25 C: | 80 A |
| Pd - Fais fab Dissipation: | 275 wb |
| Yam tsawg kawg nkaus ua haujlwm kub: | -40 C ua |
| Ua haujlwm kub siab tshaj plaws: | + 175 C |
| Series: | Trenchstop IGBT5 |
| Ntim: | Tube |
| Hom Tshuaj: | Infineon Technologies |
| Gate-Emitter Leakage Current: | 100 nA |
| Qhov siab: | 20.7mm 3 |
| Ntev: | 15.87mm 3 |
| Yam khoom: | IGBT Transistors |
| Factory Pack Quantity: | 240 |
| Cov qeb: | IGBTs |
| Lub npe lag luam: | TRENCHSTOP |
| Dav: | 5.31mm ib |
| Ntu # Aliases: | IKW 50N65EH5 SP001257944 |
| Chav ntsuas hnyav: | 0.21383 oz |
HighspeedH5Technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
• 650V breakdownvoltage
• LowgatechargeQG
•IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode
•Maximumjunctiontemperature175°C
•Qualifiedaccording toJEDECfortargetapplications
•Pb-freeleadplating; RoHS raws
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
• Cov khoom siv hluav taws xob tsis cuam tshuam
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