IKW75N65EH5XKSA1 IGBT Transistors Kev Lag Luam 14
♠ Product Description
Yam khoom | Tus nqi tsim nyog |
Chaw tsim tshuaj paus: | Infineon |
Yam khoom: | IGBT Transistors |
Technology: | Si |
Pob / Case: | TSO-247-3 |
Mounting Style: | Los ntawm Qhov |
Configuration: | Ib leeg |
Collector-Emitter Voltage VCEO Max: | 6 50v |
Collector-Emitter Saturation Voltage: | 1, 65 v |
Maximum Gate Emitter Voltage: | 20 V |
Nruam Collector Tam sim no ntawm 25 C: | 90 A |
Pd - Fais fab Dissipation: | 395 wb |
Yam tsawg kawg nkaus ua haujlwm kub: | -40 C ua |
Ua haujlwm kub siab tshaj plaws: | + 175 C |
Series: | Trenchstop IGBT5 |
Ntim: | Tube |
Hom Tshuaj: | Infineon Technologies |
Gate-Emitter Leakage Current: | 100 nA |
Qhov siab: | 20.7mm 3 |
Ntev: | 15.87mm 3 |
Yam khoom: | IGBT Transistors |
Factory Pack Quantity: | 240 |
Cov qeb: | IGBTs |
Lub npe lag luam: | TRENCHSTOP |
Dav: | 5.31mm ib |
Ntu # Aliases: | IKW75N65EH5 SP001257948 |
Chav ntsuas hnyav: | 0.211644 hli |
HighspeedH5Technologyoffering
•Best-in-Classefficiencyinhardswitchingandresonant topologies
•Plugandplayment ntawm previousgeneration IGBTs
• 650V breakdownvoltage
• LowgatechargeQG
•IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode
•Maximumjunctiontemperature175°C
• Tsim nyog raws li JEDECfortargetapplications
•Pb-freeleadplating; RoHS raws
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
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