Ib hom tshiab ntawm hafnium-based ferroelectric nco nti tsim thiab tsim los ntawm Liu Ming, Academician ntawm lub koom haum ntawm Microelectronics, tau nthuav tawm ntawm IEEE International Solid-State Circuits Conference (ISSCC) hauv 2023, qib siab tshaj plaws ntawm kev tsim hluav taws xob sib xyaw.
High-performance embedded non-volatile memory (eNVM) yog nyob rau hauv siab thov rau SOC chips nyob rau hauv cov neeg siv khoom electronics, autonomous tsheb, industrial tswj thiab ntug khoom siv rau Internet ntawm yam. Ferroelectric nco (FeRAM) muaj qhov zoo ntawm kev ntseeg siab, ultra-tsawg zog noj, thiab kev kub ceev. Nws yog dav siv nyob rau hauv ntau cov ntaub ntawv kaw nyob rau hauv lub sij hawm, nquag nyeem cov ntaub ntawv thiab sau ntawv, tsawg zog noj thiab embedded SoC / SiP khoom. Ferroelectric nco raws li cov khoom siv PZT tau ua tiav ntau lawm, tab sis nws cov khoom tsis sib haum nrog CMOS thev naus laus zis thiab nyuaj rau kev poob qis, ua rau cov txheej txheem kev txhim kho ntawm cov tsoos ferroelectric nco yog qhov cuam tshuam loj heev, thiab kev sib koom ua ke xav tau kev txhawb nqa cov kab ntau lawm, nyuaj rau nrov ntawm cov nplai loj. Lub miniaturability ntawm tshiab hafnium-based ferroelectric nco thiab nws compatibility nrog CMOS thev naus laus zis ua rau nws muaj kev tshawb fawb hotspot ntawm kev txhawj xeeb hauv kev kawm thiab kev lag luam. Hafnium-based ferroelectric nco tau raug suav tias yog ib qho tseem ceeb ntawm txoj kev loj hlob ntawm lub cim xeeb tshiab tom ntej. Tam sim no, kev tshawb fawb ntawm hafnium-based ferroelectric nco tseem muaj teeb meem xws li kev ntseeg siab ntawm chav tsev tsis txaus, tsis muaj cov qauv tsim chip nrog ua tiav peripheral circuit, thiab kev tshawb xyuas ntxiv ntawm nti qib kev ua tau zoo, uas txwv nws daim ntawv thov hauv eNVM.
Lub hom phiaj ntawm cov kev cov nyom uas tau ntsib los ntawm embedded hafnium-raws li ferroelectric nco, pab neeg ntawm Academician Liu Ming los ntawm lub koom haum ntawm Microelectronics tau tsim thiab siv lub megab-magnitude FeRAM xeem nti rau thawj zaug nyob rau hauv lub ntiaj teb no raws li lub loj-scale kev koom ua ke platform ntawm hafnium-based ferroCMOS lub cim xeeb loj, ua tiav nrog kev sib koom ua ke nrog O. ferroelectric capacitor nyob rau hauv 130nm CMOS txheej txheem. Ib qho ECC-pab sau tsav Circuit Court rau qhov ntsuas kub thiab qhov ntsuas hluav taws xob hloov hluav taws xob rau kev tshem tawm tsis siv neeg offset tau npaj tseg, thiab 1012 lub voj voog durability thiab 7ns sau thiab 5ns nyeem lub sijhawm tau ua tiav, uas yog qib zoo tshaj plaws tau tshaj tawm txog tam sim no.
Daim ntawv "A 9-Mb HZO-raws li Embedded FeRAM nrog 1012-Cycle Endurance thiab 5/7ns Nyeem / Sau siv ECC-Assisted Data Refresh" yog raws li cov txiaj ntsig thiab Offset-Canceled Sense Amplifier "tau xaiv hauv ISSCC 2023, thiab cov nti tau xaiv nyob rau hauv lub JiionussuCC. thawj tus sau ntawm daim ntawv, thiab Liu Ming yog tus sau sau.
Cov hauj lwm cuam tshuam yog txhawb los ntawm National Natural Science Foundation ntawm Tuam Tshoj, National Key Research thiab Development Program ntawm Ministry of Science thiab Technology, thiab B-Class Pilot Project ntawm Suav Academy ntawm Sciences.
(Duab ntawm 9Mb Hafnium-raws li FeRAM nti thiab nti kev ntsuas kev ua haujlwm)
Post lub sij hawm: Apr-15-2023
