IKW50N65ES5XKSA1 IGBT Transistors Kev Lag Luam 14
♠ Product Description
| Yam khoom | Tus nqi tsim nyog |
| Chaw tsim tshuaj paus: | Infineon |
| Yam khoom: | IGBT Transistors |
| Technology: | Si |
| Pob / Case: | TSO-247-3 |
| Mounting Style: | Los ntawm Qhov |
| Configuration: | Ib leeg |
| Collector-Emitter Voltage VCEO Max: | 6 50v |
| Collector-Emitter Saturation Voltage: | 1, 35 v |
| Maximum Gate Emitter Voltage: | 20 V |
| Nruam Collector Tam sim no ntawm 25 C: | 80 A |
| Pd - Fais fab Dissipation: | 274 wb |
| Yam tsawg kawg nkaus ua haujlwm kub: | -40 C ua |
| Ua haujlwm kub siab tshaj plaws: | + 175 C |
| Series: | TRENCHSTOP 5 S5 |
| Ntim: | Tube |
| Hom Tshuaj: | Infineon Technologies |
| Gate-Emitter Leakage Current: | 100 nA |
| Qhov siab: | 20.7mm 3 |
| Ntev: | 15.87mm 3 |
| Yam khoom: | IGBT Transistors |
| Factory Pack Quantity: | 240 |
| Cov qeb: | IGBTs |
| Lub npe lag luam: | TRENCHSTOP |
| Dav: | 5.31mm ib |
| Ntu # Aliases: | IKW50N65ES5 SP001319682 |
| Chav ntsuas hnyav: | 0.213537 hli |
HighspeedS5 Technologyoffering
•Highspeedsmoothswitchingdeviceforhard&softswitching
•VeryLowVCEsat,1.35Vatnominalcurrent
•Plugandplayment ntawm previousgeneration IGBTs
• 650V breakdownvoltage
• LowgatechargeQG
•IGBTcopackedwithfullratedTRAPID1fasttiparalleldiode
•Maximumjunctiontemperature175°C
• Tsim nyog raws li JEDECfortargetapplications
•Pb-freeleadplating; RoHS raws
•CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/
•Resonant converters
• Cov khoom siv hluav taws xob tsis cuam tshuam
• Welding converters
•Midtohighrangeswitchingfrequencyconverters
