SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR

Lus piav qhia luv luv:

Chaw tsim tshuaj paus: Vishay
Yam khoom: MOSFET
Daim ntawv qhia:SI1029X-T1-GE3
Nqe lus piav qhia: MOSFET N/P-CH 60V SC89-6
RoHS raws li txoj cai: RoHS raws


Product Detail

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♠ Product Description

Yam khoom Tus nqi tsim nyog
Chaw tsim tshuaj paus: Vishay
Yam khoom: MOSFET
RoHS: Paub meej
Technology: Si
Mounting Style: SMD / SMT
Pob / Case: SC-89-6
Transistor polarity: N-Channel, P-Channel
Number of Channels: 2 Channel
Vds - Ntws-qhov chaw tawg Voltage: 60 V
Id - Nruam Drain Tam Sim No: 500 mA
Rds On - Drain-Source Resistance: 1.4 hli, 4 hli
Vgs - Rooj vag qhov chaw Voltage: - 20V, + 20V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 750 pC, 1,7 nC
Yam tsawg kawg nkaus ua haujlwm kub: - 55 C ua
Ua haujlwm kub siab tshaj plaws: + 150 C
Pd - Fais fab Dissipation: 280mW ua
Channel hom: Txhim kho
Lub npe lag luam: TrenchFET
Ntim: Rov qab
Ntim: Txiav daim kab xev
Ntim: MouseReel
Hom Tshuaj: Vishay Semiconductors
Configuration: Dual
Forward Transconductance - Min: 200 mS, 100 mS
Qhov siab: 0.6mm ib
Ntev: 1.66mm 3
Yam khoom: MOSFET
Series: SI 1
Factory Pack Quantity: 3000
Cov qeb: MOSFETs
Hom Transistor: 1 N-Channel, 1 P-Channel
Lub Sijhawm Tig-Off ncua sijhawm: 20 ib, 35 ns
Lub Sijhawm Tig-On ncua sijhawm: 15 Ib., 20
Dav: 1.2 hli
Ntu # Aliases: SI1029X-GE3
Chav ntsuas hnyav: 32mg ib

 


  • Yav dhau los:
  • Tom ntej:

  • • Halogen-dawb Raws li IEC 61249-2-21 Txhais

    • TrenchFET® Power MOSFETs

    • Cov Hneev Me Me heev

    • High-Side Switching

    • Tsawg On-Resistance:

    N-Channel, 1.40 Ω

    P-Channel, 4 Ω

    • Tsawg Theem: ± 2 V (typ.)

    • Hloov ceev ceev: 15 ns (typ.)

    • Gate-Source ESD Protected: 2000 V

    • Ua raws li RoHS Cov Lus Qhia 2002/95/EC

    • Hloov Digital Transistor, Theem-Shifter

    • Roj teeb ua haujlwm Systems

    • Fais fab mov Converter Circuits

    Yam khoom